Quantifying the intrinsic amount of fabrication disorder in photonic-crystal waveguides from optical far-field intensity measurements
arXiv:1210.7212 · doi:10.1063/1.4788709
Abstract
Residual disorder due to fabrication imperfections has important impact in nanophotonics where it may degrade device performance by increasing radiation loss or spontaneously trap light by Anderson localization. We propose and demonstrate experimentally a method of quantifying the intrinsic amount of disorder in state-of-the-art photonic-crystal waveguides from far-field measurements of the Anderson-localized modes. This is achieved by comparing the spectral range that Anderson localization is observed to numerical simulations and the method offers sensitivity down to ~ 1 nm.
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Cited by in corpus (4)
- Light fields in complex media: mesoscopic scattering meets wave control
- Two mechanisms of disorder-induced localization in photonic-crystal waveguides
- Level spacing statistics for light in two-dimensional disordered photonic crystals
- Highly directed emission from self-assembled quantum dots into guided modes in disordered photonic crystal waveguides