Direct observation of the superconducting gap in thin film of titanium nitride using terahertz spectroscopy

Abstract

We report on the charge carrier dynamics of superconducting titanium nitride (TiN) in the frequency range 90 - 510 GHz (3 - 17 cm-1). The experiments were perfomed on a 18 nm thick TiN film with a critical temperature of 3.4 K. Measurements were carried out from room temperature down to 2 K, and in magnetic fields up to 7 T. We extract the real and imaginary parts of the complex conductivity as a function of frequency and temperature, directly providing the superconducting energy gap. Further analysis yields the superconducting London penetration depth. The findings as well as the normal state properties strongly suggest conventional BCS superconductivity, underlined by the BCS ratio 3.44. Detailed analysis of the charge carrier dynamics of the silicon substrate is also discussed.

5 pages, 7 figures, RevTex 4.1, Phys. Rev. B accepted manuscript

References in corpus (2)

• Disorder-Induced Inhomogeneities of the Superconducting State Close to the Superconductor-Insulator Transition
• Localized Superconductivity in the Quantum-Critical Region of the Disorder-Driven Superconductor-Insulator Transition in TiN Thin Films

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