Ultra low density of CdTe quantum dots grown by MBE

Abstract

This work presents methods of controlling the density of self-assembled CdTe quantum dots (QDs) grown by molecular beam epitaxy. Two approaches are discussed: increasing the deposition temperature of CdTe and the reduction of CdTe layer thickness. Photoluminescence (PL) measurements at low temperature confirms that both methods can be used for significant reduction of QDs density from 10${}^{10}$QD/cm${}^2$ to 10${}^7$-10${}^8$QD/cm${}^2$. For very low QDs density, identification of all QDs lines observed in the spectrum is possible.

4 pages, 7 figure

References in corpus (3)

• Excitation mechanisms of individual CdTe/ZnTe quantum dots studied by photon correlation spectroscopy
• Inter-shell exchange interaction in CdTe/ZnTe quantum dots: magneto-photoluminescence of X, X2- and XX-
• Picosecond charge variation of quantum dots under pulsed excitation

Cited by in corpus (5)

• Direct measurement of hyperfine shifts and radiofrequency manipulation of the nuclear spins in individual CdTe/ZnTe quantum dots
• MBE grown microcavities based on selenium and tellurium compounds
• Polariton lasing and energy-degenerate parametric scattering in non-resonantly driven coupled planar microcavities
• Comparison of magneto-optical properties of various excitonic complexes in CdTe and CdSe self-assembled quantum dots
• Anisotropy of in-plane hole g-factor in CdTe/ZnTe quantum dots