Minimum domain size and stability in carbon nanotube-ferroelectric devices

Abstract

Ferroelectric domain switching in c-axis-oriented epitaxial Pb(Zr0.2Ti0.8)O3 thin films was studied using different field geometries and compared to numerical simulations and theoretical predictions. With carbon nanotubes as electrodes, continuous nanodomains as small as 9 nm in radius in a 270 nm thick film could be switched, remaining stable for over 20 months. Defect pinning of domain walls appears to play a key role in stabilizing such domains, below the predicted thermodynamic size limit.

5 pages, 4 figures

References in corpus (6)

• Domain wall creep in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films
• Conduction at domain walls in insulating Pb(Zr${}_{0.2}$Ti${}_{0.8}$)O${}_3$ thin films
• Domain wall roughness in epitaxial ferroelectric PbZr0.2Ti0.8O3 thin films
• Thermodynamics of nanodomain formation and breakdown in Scanning Probe Microscopy: Landau-Ginzburg-Devonshire approach
• Thermal quench effects on ferroelectric domain walls
• The screening effects influence on the nano-domain tailoring in ferroelectrics-semiconductors

Cited by in corpus (5)

• Subcritical switching dynamics and humidity effects in nanoscale studies of domain growth in ferroelectric thin films
• Non-Ising domain walls in c-phase ferroelectric lead titanate thin films
• Degradation of domains with sequential field application
• Understanding polarization vs. charge dynamics effects in ferroelectric-carbon nanotube devices
• Dynamic response and roughening of ferroelectric domain walls driven at planar electrode edges