Impurity impact ionization avalanche in p-type diamond
arXiv:1210.0993 · doi:10.1063/1.3662403
Abstract
Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature.