Impurity Effects in Two-Electron Coupled Quantum Dots: Entanglement Modulation

Abstract

We present a detailed analysis of the electronic and optical properties of two-electron quantum dots with a two-dimensional Gaussian confinement potential. We study the effects of Coulomb impurities and the possibility of manipulate the entanglement of the electrons by controlling the confinement potential parameters. The degree of entanglement becomes highly modulated by both the location and charge screening of the impurity atom, resulting two regimes: one of low entanglement and other of high entanglement, with both of them mainly determined by the magnitude of the charge. It is shown that the magnitude of the oscillator strength of the system could provide an indication of the presence and characteristics of impurities that could largely influence the degree of entanglement of the system.

Regular Article (Journal of Physics B, in press), 9 pages, 10 figures

References in corpus (8)

• Sudden Death of Entanglement
• Non-Markovian effects on the dynamics of entanglement
• Essential entanglement for atomic and molecular physics
• NMR quantum simulation of localization effects induced by decoherence
• Impurity effects on semiconductor quantum bits in coupled quantum dots
• The Relationship Between Entanglement, Energy, and Level Degeneracy in Two-Electrons Systems
• Entropy, fidelity, and double orthogonality for resonance states in two-electron quantum dots
• Analytical model of non-Markovian decoherence in donor-based charge quantum bits

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• Quantification of entanglement entropy in helium by the Schmidt-Slater decomposition method
• Quantification of Entanglement Entropies for Doubly Excited States in Helium