Directional terahertz emission from diffusion-engineered InAs structures

Abstract

We have designed and fabricated a new type of terahertz (THz) emitter that radiates THz waves along the surface-normal direction because of the lateral distributions of the transient electric dipoles. The excitation and measurements were performed using a conventional THz time-domain spectroscopy scheme with femtosecond optical pulses. The corrugated mirror patterns on the InAs layers made the radiation directional along the surface-normal direction, and the emission efficiency was controlled by adjustment of the pattern width.

4 pages, 3 figures

References in corpus (2)

• Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors
• Nexus between directionality of THz waves and structural parameters in groove-patterned InAs

Cited by in corpus (1)

• Phase manipulation of terahertz waves by work function engineering in metal-graphite structures