On the critical temperature and the energy gap in dense SiH4(H2)2 at 250 GPa

R. Szczȩśniak; A. P. Durajski

doi:10.1016/j.ssc.2012.10.015

paper

On the critical temperature and the energy gap in dense SiH4(H2)2 at 250 GPa

arXiv:1208.4258 · doi:10.1016/j.ssc.2012.10.015

Abstract

The critical temperature ( $T_{C}$ ) and the energy gap ( $2Δ (T)$ ) for the superconductor SiH $_{4}$ (H $_{2}$ ) $_{2}$ at 250 GPa have been calculated. The wide range of the Coulomb pseudopotential's values has been considered: $μ^{⋆} \in< 0.1, 0.3 >$ . It has been stated that $T_{C}$ decreases together with the increase of $μ^{⋆}$ from 129.83 K to 81.40 K. The low-temperature energy gap ( $T \sim 0$ K) decreases together with the increase of the Coulomb pseudopotential from 50.96 meV to 30.12 meV. The high values of $2Δ (0)$ mean that the dimensionless ratio $R_{Δ} \equiv 2Δ (0) / k_{B} T_{C}$ significantly exceeds the value predicted by the classical BCS theory. In the considered case: $R_{Δ} \in< 4.55, 4.29 >$ . Due to the unusual dependence of the critical temperature and the energy gap on $μ^{⋆}$ , the analytical expressions for $T_{C} (μ^{⋆})$ and $Δ (μ^{⋆})$ have been given.

arXiv comment7 pages, 5 figures

On the critical temperature and the energy gap in dense SiH4(H2)2 at 250 GPa

Abstract

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