Universal scaling of the order-parameter distribution in strongly disordered superconductors

Abstract

We investigate theoretically and experimentally the statistical properties of the inhomogeneous order-parameter distribution (OPD) at the verge of the superconductor-insulator transition (SIT). We find within two prototype fermionic and bosonic models for disordered superconductors that one can identify a universal rescaling of the OPD. By performing scanning-tunneling microscopy experiments in three samples of NbN with increasing disorder we show that such a rescaling describes also with an excellent accuracy the experimental data. These results can provide a breakthrough in our understanding of the SIT.

11 pages, 8 figures, revised version submitted to PRB

References in corpus (9)

• Nature of the superconductor-insulator transition in disordered superconductors
• Eigenfunction fractality and pseudogap state near superconductor-insulator transition
• Superconducting properties and Hall Effect of epitaxial NbN thin films
• Phase fluctuations in a strongly disordered s-wave superconductor close to the metal-insulator transition
• Tunneling studies in a homogeneously disordered s-wave superconductor: NbN
• Temperature dependence of resistivity and Hall-coefficient in a strongly disordered metal: NbN
• Frequency dependent superfluid stiffness in the pseudogap regime in strongly disordered NbN thin films
• Phase diagram and upper critical field of homogenously disordered epitaxial 3-dimensional NbN films
• Island formation in disordered superconducting thin films at finite magnetic fields

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