Threading dislocation densities in semiconductor crystals: a geometric approach

Abstract

In this letter, we introduce a geometric model to explain the origin of the observed shallow levels in semiconductors threaded by a dislocation density. We show that a uniform distribution of screw dislocations acts as an effective uniform magnetic field which yields bound states for a spin-half quantum particle, even in the presence of a repulsive Coulomb-like potential. This introduces energy levels within the band gap, increasing the carrier concentration in the region threaded by the dislocation density and adding additional recombination paths other than the near band-edge recombination.

9 pages, no figure

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• Comment on: "Interaction of the magnetic quadrupole moment of a non-relativistic particle with an electric field in a rotating frame. Ann. Phys. 412 (2020) 168040''
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• Comment on: "Bound states for a Coulomb-type potential induced by the interaction between a moving electric quadrupole moment and a magnetic field". Ann. Phys. 341 (2014) 86