The Nature of the magnetism-promoting hole state in the prototype magnetic semiconductor GaAs: Mn
arXiv:1208.2811
Abstract
Recent experiments [1] suggest that the ferromagnetism (FM) in GaAs: Mn is determined by the impurity band rather than holes in the valence band. We discuss here the physical mechanism of FM mediated by the carriers in impurity band, where the Mn d-level play a crucial role. The theory is based on the first principle approach.
6 pages, 1 figure