Bipolar Magnetic Semiconductors: A New Class of Spintronics Materials

Abstract

Electrical control of spin polarization is very desirable in spintronics, since electric field can be easily applied locally in contrast with magnetic field. Here, we propose a new concept of bipolar magnetic semiconductor (BMS) in which completely spin-polarized currents with reversible spin polarization can be created and controlled simply by applying a gate voltage. This is a result of the unique electronic structure of BMS, where the valence and conduction bands possess opposite spin polarization when approaching the Fermi level. Our band structure and spin-polarized electronic transport calculations on semi-hydrogenated single-walled carbon nanotubes confirm the existence of BMS materials and demonstrate the electrical control of spin-polarization in them.

20 pages, 6 figures, accepted by Nanoscale

References in corpus (4)

• Electric Field Effect in Atomically Thin Carbon Films
• Half-Metallic Graphene Nanoribbons
• Coherent control of a single electron spin with electric fields
• Spin-orbit gap of graphene: First-principles calculations

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• Robust p-orbital half-metallicity and high Curie-temperature in the hole-doped anisotropic TcS2 (X=S, Se) nanosheets
• Discovery of Hidden Classes of Layered Electrides by Extensive High-throughput Materials Screening