Electro-mechanically induced GHz rate optical frequency modulation in silicon

Abstract

We present a monolithic silicon acousto-optic frequency modulator (AOFM) operating at 1.09GHz. Direct spectroscopy of the modulated laser power shows asymmetric sidebands which indicate coincident amplitude modulation and frequency modulation. Employing mechanical levers to enhance displacement of the optical resonator resulted in greater than 67X improvement in the opto-mechanical frequency modulation factor over earlier reported numbers for silicon nanobeams.

References in corpus (5)

• Cavity Optomechanics
• Resolved Sideband Cooling of a Micromechanical Oscillator
• Dynamic modulation of photonic crystal nanocavities using gigahertz acoustic phonons
• Resolved Sideband Emission of InAs/GaAs Quantum Dots Strained by Surface Acoustic Waves
• Electrostatic actuation of silicon optomechanical resonators