Optical Response of DyN

Abstract

We report measurements of the optical response of polycrystalline DyN thin films. The frequency-dependent complex refractive index in the near IR-visible-near UV was determined by fitting reflection/transmission spectra. In conjunction with resistivity measurements these identify DyN as a semiconductor with 1.2 eV optical gap. When doped by nitrogen vacancies it shows free carrier absorption and a blue-shifted gap associated with the Moss-Burstein effect. The refractive index of 2.0+/-0.1 depends only weakly on energy. Far infrared reflectivity data show a polar phonon of frequency 280 cm-1 and dielectric strength delta epsilon= 20.

References in corpus (4)

• Ferromagnetic redshift of the optical gap in GdN
• Comparison between experiment and calculated band structures for DyN and SmN
• \textit{Additional} carrier-mediated ferromagnetism in GdN
• Electric field and photo-excited control of the carrier concentration in GdN

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• Band gap and pseudocapacitance of Gd${}_2$O${}_3$ doped with Ni${}_{0.5}$Zn${}_{0.5}$Fe${}_2$O${}_4$