Unveiling the intruder deformed 0 state in Si
arXiv:1206.6572 · doi:10.1103/PhysRevLett.109.092503
Abstract
The 0 state in Si has been populated at the {\sc Ganil/Lise3} facility through the -decay of a newly discovered 1 isomer in Al of 26(1) ms half-life. The simultaneous detection of pairs allowed the determination of the excitation energy E(0)=2719(3) keV and the half-life T=19.4(7) ns, from which an electric monopole strength of (E0)=13.0(0.9) was deduced. The 2 state is observed to decay both to the 0 ground state and to the newly observed 0 state (via a 607(2) keV transition) with a ratio R(2)=1380(717). Gathering all information, a weak mixing with the 0 and a large deformation parameter of =0.29(4) are found for the 0 state, in good agreement with shell model calculations using a new {\sc sdpf-u-mix} interaction allowing \textit{np-nh} excitations across the N=20 shell gap.
5 pages, 3 figures, accepted for publication in Physical Review Letters
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