Low-temperature thermal conductivity in polycrystalline graphene

Abstract

The low-temperature thermal conductivity in polycrystalline graphene is theoretically studied. The contributions from three branches of acoustic phonons are calculated by taking into account scattering on sample borders, point defects and grain boundaries. Phonon scattering due to sample borders and grain boundaries is shown to result in a $T^{\alpha }$-behaviour in the thermal conductivity where $\alpha$ varies between 1 and 2. This behaviour is found to be more pronounced for nanosized grain boundaries. PACS: 65.80.Ck, 81.05.ue, 73.43.Cd

References in corpus (7)

• The electronic properties of graphene
• Thermal Properties of Graphene, Carbon Nanotubes and Nanostructured Carbon Materials
• Graphene films with large domain size by a two-step chemical vapor deposition process
• Electronic transport in polycrystalline graphene
• Topological Defects in Graphene: Dislocations and Grain Boundaries
• Grain Boundary Loops in Graphene
• Conversion of self-assembled monolayers into nanocrystalline graphene: Structure and electric transport

Cited by in corpus (4)

• Temperonic Crystal: a superlattice for temperature waves in graphene
• Effect of Stone-Wales defects on the thermal conductivity of graphene
• Growth, charge and thermal transport of flowered graphene
• Impact of grain boundary characteristics on thermal transport in polycrystalline graphene: Analytical results