Designer quantum spin Hall phase transition in molecular graphene
arXiv:1205.4728 · doi:10.1103/PhysRevB.86.201406
Abstract
Graphene was the first material predicted to be a time-reversal-invariant topological insulator; however, the insulating gap is immeasurably small owing to the weakness of spin-orbit interactions in graphene. A recent experiment [1] demonstrated that designer honeycomb lattices with graphene-like "Dirac" band structures can be engineered by depositing a regular array of carbon monoxide atoms on a metallic substrate. Here, we argue that by growing such designer lattices on metals or semiconductors with strong spin-orbit interactions, one can realize an analog of graphene with strong intrinsic spin-orbit coupling, and hence a highly controllable two-dimensional topological insulator. We estimate the range of substrate parameters for which the topological phase is achievable, and consider the experimental feasibility of some candidate substrates.
5 pages, 3 figures
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- Disorder-induced topological phase transitions on Lieb lattices
- Topological crystalline insulator phase in graphene multilayers
- Non-abelian gauge fields and quadratic band touchings in molecular graphene
- Topological Phases in Triangular Lattices of Ru Adsorbed on Graphene: ab-initio calculations
- Tuning the topological insulator states of artificial graphene
- Quantum phase transitions of topological insulators without gap closing
- Charge and spin Hall effect in spin chiral ferromagnetic graphene
- Two-dimensional topological semimetal state in a nanopatterned semiconductor system
- The electronic structure and intervalley coupling of artificial and genuine graphene superlattice
- Magnification of signatures of topological phase transition by quantum zero point motion
- The Effective field theory of 2+1 dimensional topological insulator in the presence of Rashba spin-orbit interaction