Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure

Abstract

A virtual substrate for high quality InAs epitaxial layer has been attained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53 % to 100 %. The use of trimethylantimony (or its decomposition products) as a surfactant has been found to crucially enable the control over the defect formation during the relaxation process. Moreover, an investigation of the wafer offcut-dependence of the defect formation and surface morphology has enabled the achievement of a reliably uniform growth on crystals with offcut towards the [111]B direction.

References in corpus (2)

• Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy
• Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells

Cited by in corpus (5)

• Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy
• Evaluation of defect density by top-view large scale AFM on metamorphic structures grown by MOVPE
• Unexpected aspects of strain relaxation and compensation in InGaAs metamorphic structures grown by MOVPE
• The importance of overcoming MOVPE surface evolution instabilities for >1.3 $\mu$m metamorphic lasers on GaAs
• Issues related to the usage of nitrogen as carrier gas for the MOVPE growth of GaSb/InAs heterostructures on InAs pseudosubstrates