Inter-dot coupling and excitation transfer mechanisms of telecommunication band InAs quantum dots at elevated temperatures

Abstract

We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot number is done by the processing of suitable nanometer sized mesas. Using ensembles of only a few dots inside such mesas, their temperature stability, inter-dot charge transfer, as well as, carrier capture and escape mechanisms out of the dots are investigated systematically. This includes the discussion of the dot ensemble and individual dots. Among the single-dot properties, we investigate the transition of emission lines from zero-phonon line to acoustic phonon sideband dominated line shape with temperature. Moreover, the presence of single recombination lines up to temperatures of around 150 K is demonstrated.

20 pages, 10 figures

References in corpus (5)

• Entangled Photon Pairs from Semiconductor Quantum Dots
• Direct Observation of Controlled Coupling in an Individual Quantum Dot Molecule
• Improved fidelity of triggered entangled photons from single quantum dots
• Ultrafast optical control of entanglement between two quantum dot spins
• Enhanced sequential carrier capture into individual quantum dots and quantum posts controlled by surface acoustic waves