Mott-Hubbard localization in model of electronic subsystem of doped fullerides

Abstract

Microscopical model of a doped fulleride electronic subsystem taking into account the triple orbital degeneracy of energy states is considered within the configurational-operator approach. Using the Green function method the energy spectrum of the model at integer band filling $n=1$ is calculated, which case corresponds to $A{C}_{60}$ compounds. Possible correlation-driven metal-insulator transition in the model is discussed.