Description of the plasma delay effect in silicon detectors

Abstract

A new method of modeling of the current signal induced by charged particle in silicon detectors is presented. The approach is based on the Ramo-Shockley theorem for which the charge carrier velocities are determined by taking into account not only the external electric field generated by the electrodes, but also the Coulomb interaction between the electron and hole clouds as well as their diffusion.

8 figures

References in corpus (2)

• Constraint Molecular Dynamics approach to Fermionic systems
• Charge and current-sensitive preamplifiers for pulse shape discrimination techniques with silicon detectors

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