Interference mechanism of magnetoresistance in variable range hopping conduction: the effect of paramagnetic electron spins and continuous spectrum of scatterer energies

Abstract

Despite the fact that the problem of interference mechanism of magnetoresistance in semiconductors with hopping conductivity was widely discussed, most of existing studies were focused on the model of spinless electrons. This model can be justified only when all electron spins are frozen. However there is always an admixture of free spins in the semiconductor. This study presents the theory of interference contribution to magnetoresistance that explicitly includes effects of both frozen and free electron spins. We consider the cases of small and large number of scatterers in the hopping event. For the case of large number of scatterers the approach is used that takes into account the dispersion of the scatterer energies. We compare our results with existing experimental data.

31 pages, 11 figures, to be published in Phys. Rev. B

References in corpus (4)

• Strongly Localized Electrons in a Magnetic Field: Exact Results on Quantum Interference and Magnetoconductance
• Analytical results on quantum interference and magnetoconductance for strongly localized electrons in a magnetic field: Exact summation of forward-scattering paths
• Magnetoresistance in semiconductor structures with hopping conductivity: effects of random potential and generalization for the case of acceptor states
• Directed paths on hierarchical lattices with random sign weights

Cited by in corpus (3)

• Electrical spin orientation, spin-galvanic and spin-Hall effects in disordered two-dimensional systems
• Hall effect in 2D systems with hopping transport and strong disorder
• Spin-related phenomena in two-dimensional hopping regime in magnetic field