Surface effects in a semiconductor photonic nanowire and spectral stability of an embedded single quantum dot

Abstract

We evidence the influence of surface effects for InAs quantum dots embedded into GaAs photonic nanowires used as efficient single photon sources. We observe a continuous temporal drift of the emission energy that is an obstacle to resonant quantum optics experiments at the single photon level. We attribute the drift to the sticking of oxygen molecules onto the wire, which modifies the surface charge and hence the electric field seen by the quantum dot. The influence of temperature and excitation laser power on this phenomenon is studied. Most importantly, we demonstrate a proper treatment of the nanowire surface to suppress the drift.

References in corpus (4)

• A Diamond Nanowire Single Photon Antenna
• Dramatic reduction of surface recombination by in-situ surface passivation of silicon nanowires
• Manipulating exciton fine-structure in quantum dots with a lateral electric field
• Giant Optical Non-linearity induced by a Single Two-Level System interacting with a Cavity in the Purcell Regime

Cited by in corpus (5)

• Strain-mediated coupling in a quantum dot-mechanical oscillator hybrid system
• Direct observation of nanofabrication influence on the optical properties of single self-assembled InAs/GaAs quantum dots
• A strain-tunable quantum dot embedded in a nanowire antenna
• Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon
• Exciton Footprint of Self-assembled AlGaAs Quantum Dots in Core-Shell Nanowires