Single crystal growth by self-flux method of the mixed valence gold halides Cs[AuX][AuX] (X=Br,I)
arXiv:1111.7017 · doi:10.1016/j.jcrysgro.2012.06.039
Abstract
High quality single crystals of CsAuX (X=Br,I) were grown using a ternary self-flux method. Structural refinements based on single crystal X-ray diffraction measurements show that both materials have a distorted perovskite structure belonging to the I4/mmm space group with full site occupancy. Transport measurements reveal a large bandgap of 550 100 meV for CsAuI and 520 80 meV for CsAuBr. Initial attempts at chemical substitution are described.
References in corpus (3)
Cited by in corpus (4)
- Optoelectronic Properties and Defect Physics of Lead-free Photovoltaic Absorbers CsAuAuX (X=I, Br)
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- Large Resistivity Reduction in Mixed-Valent CsAuBr Under Pressure
- Dielectric softening in the halide double perovskites Au (: Cs, Rb; : Cl, Br, I) via a strain-mediated pseudotriggered mechanism