paper

Anomalous Hall effect in the Co-based Heusler compounds Co $_{2}$ FeSi and Co $_{2}$ FeAl

arXiv:1109.5498 · doi:10.1063/1.3678323

Abstract

The anomalous Hall effect (AHE) in the Heusler compounds Co $_{2}$ FeSi and Co $_{2}$ FeAl is studied in dependence of the annealing temperature to achieve a general comprehension of its origin. We have demonstrated that the crystal quality affected by annealing processes is a significant control parameter to tune the electrical resistivity $I ¨ _{xx}$ as well as the anomalous Hall resistivity $I ¨ _{ah e}$ . Analyzing the scaling behavior of $I ¨ _{ah e}$ in terms of $I ¨ _{xx}$ points to a temperature-dependent skew scattering as the dominant mechanism in both Heusler compounds.

Anomalous Hall effect in the Co-based Heusler compounds Co2​FeSi and Co2​FeAl

Abstract

Anomalous Hall effect in the Co-based Heusler compounds Co $_{2}$ FeSi and Co $_{2}$ FeAl