Reentrant nu = 1 quantum Hall state in a two-dimensional hole system

Abstract

We report the observation of a reentrant quantum Hall state at the Landau level filling factor nu = 1 in a two-dimensional hole system confined to a 35-nm-wide (001) GaAs quantum well. The reentrant behavior is characterized by a weakening and eventual collapse of the nu = 1 quantum Hall state in the presence of a parallel magnetic field component B||, followed by a strengthening and reemergence as B|| is further increased. The robustness of the nu = 1 quantum Hall state during the transition depends strongly on the charge distribution symmetry of the quantum well, while the magnitude of B|| needed to invoke the transition increases with the total density of the system.

References in corpus (2)

• Observation of a Fractional Quantum Hall State at $\nu =1/4$ in a Wide GaAs Quantum Well
• Fractional Quantum Hall Effect at High Fillings in a Two-subband Electron System

Cited by in corpus (8)

• Even-denominator Fractional Quantum Hall Effect at a Landau Level Crossing
• Fermi Contour Anisotropy of GaAs Electron-Flux Composite Fermions in Parallel Magnetic Fields
• Composite Fermions with a Warped Fermi Contour
• Robust Quantum Hall Ferromagnetism near a Gate-Tuned ν = 1 Landau Level Crossing
• Observation of An Anisotropic Wigner Crystal
• Unusual Landau Level Pinning and Correlated $\nu =1$ Quantum Hall Effect in Hole Systems Confined to Wide GaAs Quantum Wells
• Morphing of 2D Hole Systems at $\nu =3/2$ in Parallel Magnetic Fields: Compressible, Stripe, and Fractional Quantum Hall Phases
• Photovoltage Detection of Edge Magnetoplasmon Oscillations and Giant Magnetoplasmon Resonances in A Two-Dimensional Hole System