Growth of atomically smooth thin films of the electronically phase separated manganite (La$_{0.5}$Pr$_{0.5}$)$_{0.67}$Ca$_{0.33}$MnO$_{3}$

Hyoungjeen Jeen; Rafiya Javed; Amlan Biswas

paper

Growth of atomically smooth thin films of the electronically phase separated manganite (La $_{0.5}$ Pr $_{0.5}$ ) $_{0.67}$ Ca $_{0.33}$ MnO $_{3}$

arXiv:1109.3225

Abstract

Atomically flat, epitaxial, and stoichiometric thin films of the electronically phase separated compound (La $_{0.5}$ Pr $_{0.5}$ ) $_{0.67}$ Ca $_{0.33}$ MnO $_{3}$ were grown on as-received and treated NdGaO $_{3}$ substrates by fine tuning of oxygen pressure during deposition. Optimal thin films with step flow growth mode show superior physical properties compared to thin films grown in off-optimal oxygen pressures, {\em viz.} the highest maximum temperature coefficient of resistance, the highest peak-resistivity temperature, and reduced coercive fields. Transport, magnetization, and x-ray diffraction measurements indicate that the oxygen pressure during growth plays a critical role in the formation of oxygen vacancies, cation vacancies, and grain boundaries.

4 pages latex, 3 embedded EPS figures

Growth of atomically smooth thin films of the electronically phase separated manganite (La0.5​Pr0.5​)0.67​Ca0.33​MnO3​

Abstract

Growth of atomically smooth thin films of the electronically phase separated manganite (La $_{0.5}$ Pr $_{0.5}$ ) $_{0.67}$ Ca $_{0.33}$ MnO $_{3}$