An intrinsic mobility ceiling of Si bulk

Abstract

We compute by Density Functional Theory-Non Equilibrium Green Functions Formalism (DFT-NEGFF) the conductance of bulk Si along different crystallographic directions. We find a ceiling value for the intrinsic mobility of bulk silicon of $8.4\cdot 10^{6}c{m}^2/V\cdot s$. We suggest that this result is related to the lowest effective mass of the $<001>$ direction.

arXiv comment6 pages, 2 figures