Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate

Abstract

In this paper, we study the Cauchy problem of a time-dependent drift-diffusion-Poisson system for semiconductors. Existence and uniqueness of global weak solutions are proven for the system with a higher-order nonlinear recombination-generation rate R. We also show that the global weak solution will converge to a unique equilibrium as time tends to infinity.

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