Vacuum Annealed Cu contacts for graphene electronics

Abstract

We present transfer-length-method measurements of the contact resistance between Cu and graphene, and a method to significantly reduce the contact resistance by vacuum annealing. Even in samples with heavily contaminated contacts, the contacts display very low contact resistance post annealing. Due to the common use of Cu, and it's low chemical reactivity with graphene, thermal annealing will be important for future graphene devices requiring non-perturbing contacts with low contact resistance.

8 pages, 3 figures

References in corpus (6)

• Electric Field Effect in Atomically Thin Carbon Films
• Doping graphene with metal contacts
• First-principles study of the interaction and charge transfer between graphene and metals
• Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
• Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point
• Effects of metallic contacts on electron transport through graphene

Cited by in corpus (4)

• The role of contact resistance in graphene field-effect devices
• Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts
• Ultra Low Specific Contact Resistivity in Metal-Graphene Junctions via Atomic Orbital Engineering
• Origin of Contact Resistance at Ferromagnetic Metal-Graphene Interfaces