Study of transfer reaction channel in C + Al system
arXiv:1107.5674
Abstract
The 1p transfer channel in the Al(C, B)Si reaction has been studied at E = 73, 81 and 85 MeV. The finite range distorted wave Born approximation calculations have been performed using phenomenological optical model potential to analyze the angular distributions for 3 transitions populating the 0.0, 1.78 and 4.62 MeV states of Si and 2 transitions populating the 2.12 and 4.44 MeV states of B via the Al(C, B)Si reaction. The spectroscopic strengths as well as spectroscopic factors have been extracted for all the five states. The extracted strength values are compared with shell model calculations.
8 pages, 8 figures, 3 tables