Modified exponential I(U) dependence and optical efficiency of AlGaAs SCH lasers in computer modeling with Synopsys TCAD

Abstract

Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD, and open source software. We propose a modified exponential $I-V$ dependence to describe electrical properties. A simple analytical, phenomenological model is found to describe optical efficiency, $\eta$, with a high accuracy, by using two parameters only. A link is shown between differential electrical resistivity $r=dU/dI$ just above the lasing offset voltage, and the functional $\eta (U)$ dependence.

References in corpus (2)

• The radiative characteristics of quantum-well active region of AlGaAs lasers with separate-confinement heterostructure (SCH)
• Doping effects in AlGaAs lasers with separate confinement heterostructures (SCH). Modeling optical and electrical characteristics with Sentaurus TCAD