Charge control in InP/GaInP single quantum dots embedded in Schottky diodes

Abstract

We demonstrate control by applied electric field of the charge states in single self-assembled InP quantum dots placed in GaInP Schottky structures grown by metalorganic vapor phase epitaxy. This has been enabled by growth optimization leading to suppression of formation of large dots uncontrollably accumulating charge. Using bias- and polarization-dependent micro-photoluminescence, we identify the exciton multi-particle states and carry out a systematic study of the neutral exciton state dipole moment and polarizability. This analysis allows for the characterization of the exciton wavefunction properties at the single dot level for this type of quantum dots. Photocurrent measurements allow further characterization of exciton properties by electrical means, opening new possibilities for resonant excitation studies for such system.

arXiv comment7 pages, 4 figures

References in corpus (8)

• Electronic structure of strained InP/GaInP quantum dots
• Fast optical preparation, control and read-out of single quantum dot spin
• Direct measurement of the hole-nuclear spin interaction in single quantum dots
• Pumping of nuclear spins by the optical solid effect in a quantum dot
• Biexciton recombination rates in self-assembled quantum dots
• Polarization freezing of 10000 optically-cooled nuclear spins by coupling to a single electron
• Overhauser effect in individual InP/GaInP dots
• Controlling the Interaction of Electron and Nuclear Spins in a Tunnel-Coupled Quantum Dot

Cited by in corpus (3)

• Optical spectroscopy of single quantum dots at tunable positive, neutral and negative charge states
• Excitation spectroscopy of single quantum dots at tunable positive, neutral and negative charge states
• Disorder-dressed quantum evolution