Charge transport across metal/molecular (alkyl) monolayer-Si junctions is dominated by the LUMO level

Abstract

We compare the charge transport characteristics of heavy doped p- and n-Si-alkyl chain/Hg junctions. Photoelectron spectroscopy (UPS, IPES and XPS) results for the molecule-Si band alignment at equilibrium show the Fermi level to LUMO energy difference to be much smaller than the corresponding Fermi level to HOMO one. This result supports the conclusion we reach, based on negative differential resistance in an analogous semiconductor-inorganic insulator/metal junction, that for both p- and n-type junctions the energy difference between the Fermi level and LUMO, i.e., electron tunneling, controls charge transport. The Fermi level-LUMO energy difference, experimentally determined by IPES, agrees with the non-resonant tunneling barrier height deduced from the exponential length-attenuation of the current.

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Cited by in corpus (4)

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• Molecular Electronics by Chemical Modification of Semiconductor Surfaces
• Molecule-Electrode Interface Energetics in Molecular Junction: a Transition Voltage Spectroscopy Study
• Role of Hydration on the Electronic Transport through Molecular Junctions on Silicon