Spatial mapping and manipulation of two tunnel-coupled quantum dots

Abstract

The metallic tip of a scanning force microscope operated at 300 mK is used to locally induce a potential in a fully controllable double quantum dot defined via local anodic oxidation in a GaAs/AlGaAs heterostructure. Using scanning gate techniques we record spatial images of the current through the sample for different numbers of electrons on the quantum dots (i.e., for different quantum states). Owing to the spatial resolution of current maps, we are able to determine the spatial position of the individual quantum dots, and investigate their apparent relative shifts due to the voltage applied to a single gate.

References in corpus (8)

• Spins in few-electron quantum dots
• Electron transport through double quantum dots
• Coherent Branched Flow in a Two-Dimensional Electron Gas
• Spatially resolved manipulation of single electrons in quantum dots using a scanned probe
• Imaging Localized States in Graphene Nanostructures
• Imaging a Single-Electron Quantum Dot
• Imaging and controlling electron transport inside a quantum ring
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Cited by in corpus (7)

• Nanoscale thermal imaging of dissipation in quantum systems
• Spatially resolved study of backscattering in the quantum spin Hall state
• Simulations of imaging of the local density of states by charged probe technique for resonant cavities
• Microwave-frequency scanning gate microscopy of a Si/SiGe double quantum dot
• Investigations of local electronic transport in InAs nanowires by scanning gate microscopy at helium temperatures
• Conductance microscopy of quantum dots weakly or strongly coupled to the conducting channel
• Supercurrent modulation in InSb nanoflag-based Josephson junctions by scanning gate microscopy