Iron-chalcogenide FeSeTe coated superconducting tapes for high field applications
arXiv:1106.2466 · doi:10.1063/1.3606557
Abstract
The high upper critical field characteristic of the recently discovered iron-based superconducting chalcogenides opens the possibility of developing a new type of non-oxide high-field superconducting wires. In this work, we utilize a buffered metal template on which we grow a textured FeSeTe layer, an approach developed originally for high temperature superconducting coated conductors. These tapes carry high critical current densities (>1A/cm) at about 4.2K under magnetic field as high as 25 T, which are nearly isotropic to the field direction. This demonstrates a very promising future for iron chalcogenides for high field applications at liquid helium temperatures. Flux pinning force analysis indicates a point defect pinning mechanism, creating prospects for a straightforward approach to conductor optimization.
Accepted for publication in Appl. Phys. Lett
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- Fe-based superconducting thin films on metallic substrates: growth, characteristics and relevant properties
- Thin Film Growth and Device Fabrication of Iron-Based Superconductors
- Development of very high Jc in Ba(Fe1-xCox)2As2 thin films grown on CaF2
- Unabridged phase diagram for single-phased FeSexTe1-x thin films
- Grain boundary characteristics of Fe-based superconductors
- Oxypnictide SmFeAs(O,F) superconductor: a candidate for high-field magnet applications
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- High-field transport properties of a P-doped BaFe2As2 film on technical substrate
- Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin ilms
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- Microstructural and transport properties of superconducting FeTe0.65Se0.35 crystals
- BaFe2(As1-xPx)2 (x = 0.22-0.42) thin films grown on practical metal-tape substrates and their critical current densities
- Sulfur annealing effect for superconductivity in iron chalcogenide compounds
- Particulate Generation on Surface of Iron Selenide Films by Air Exposure
- Magneto-optical characterizations of FeTeSe thin films with critical current density over 1 MA/cm