Bandgap engineering of zigzag graphene nanoribbons by manipulating edge states via defective boundaries
arXiv:1105.5858 · doi:10.1088/0957-4484/22/43/435702
Abstract
One of severe limits of graphene nanoribbons (GNRs) in future applications is that zigzag GNRs (ZGNRs) are gapless, so cannot be used in field effect transistors (FETs). In this paper, using tight-binding approach and first principles method, we derived and proved a general edge (boundary) condition for the opening of a significant bandgap in ZGNRs with defective edge structures. The proposed semiconducting GNRs have some interesting properties including the one that they can be embedded and integrated in a large piece of graphene without the need of completely cutting them out. We also demonstrated a new type of high-performance all-ZGNR FET.
References in corpus (7)
- Electric Field Effect in Atomically Thin Carbon Films
- Energy Band Gap Engineering of Graphene Nanoribbons
- Energy Gaps in Graphene Nanoribbons
- Graphene Antidot Lattices - Designed Defects and Spin Qubits
- Boundary conditions for Dirac fermions on a terminated honeycomb lattice
- Etching of Graphene Devices with a Helium Ion Beam
- Band-gap engineering and ballistic transport in corrugated graphene nanoribbons