Josephson Current through a Planar Junction of Graphene

Abstract

Josephson effect in a planar graphene junction is studied by assuming that the coupling of a graphene sheet and two superconductors deposited on its top is described by a tunneling Hamiltonian. This model properly takes account of the proximity effect characteristic to a planar junction, and allows us to treat monolayer and bilayer cases in a parallel manner. Applying a quasiclassical Green's function approach to it we analyze the Josephson critical current $I_{\mathrm{c}}$ in a short-junction limit. As a characteristic feature of the planar junction we find that $I_{\mathrm{c}}$ is a concave function of temperature at the strong coupling limit while it crosses over to a convex function with decreasing the coupling strength. We also find different chemical-potential dependences of $I_{\mathrm{c}}$ in the monolayer and bilayer cases.

10 pages, 2 figures

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• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Bipolar supercurrent in graphene
• Josephson effect in ballistic graphene
• Josephson Current and Multiple Andreev Reflections in Graphene SNS Junctions
• Tuning the proximity effect in a superconductor-graphene-superconductor junction
• Critical Josephson current in ballistic superconductor-graphene systems
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Cited by in corpus (7)

• Short Ballistic Josephson Coupling in Planar Graphene Junctions with Inhomogeneous Carrier Doping
• 1/f critical current noise in short ballistic graphene Josephson junctions
• Quasiclassical Theory of the Josephson Effect in Ballistic Graphene Junctions
• Superconducting proximity effect on a two-dimensional Dirac electron system
• Effect of dilute impurities on short graphene Josephson junctions
• Josephson coupling between superconducting islands on single and bilayer graphene
• Unified Formula for Stationary Josephson Current in Planar Graphene Junctions