Electron- and Hole-Doping Effects on $A$-site Ordered NdBaMn${}_2$O${}_6$

Abstract

We have investigated electron- and hole-doping effects on $A$-site ordered perovskite manganite NdBaMn${}_2$O${}_6$, which has the $A$-type (layered) antiferromagnetic (AFM) ground state. Electrons (holes) are introduced by partial substitution of Ba${}^{2+}$ (Nd${}^{3+}$) with Nd${}^{3+}$ (Ba${}^{2+}$). Electron-doping generates ferromagnetic (FM) clusters in the $A$-type AFM matrix. With increasing the electron-doping level, the volume fraction of the FM phase or the number of the FM clusters is abruptly increasing. In contrast, the $A$-type AFM phase is robust against the hole-doping, and no FM correlation is observed in the hole-doped NdBaMn${}_2$O${}_6$.

8 pages, 5 figures, to be published in Journal of the Physical Society of Japan

References in corpus (2)

• Colossal Magnetoresistant Materials: The Key Role of Phase Separation
• Structures and Electromagnetic Properties of New Metal-Ordered Manganites; RBaMn_{2}O_{6} (R = Y and Rare Earth Elements)