Lasing in localized modes of a slow light photonic crystal waveguide

Abstract

We demonstrate lasing in GaAs photonic crystal waveguides with InAs quantum dots as gain medium. Structural disorder is present due to fabrication imperfection and causes multiple scat- tering of light and localization of light. Lasing modes with varying spatial extend are observed at random locations along the guide. Lasing frequencies are determined by the local structure and occur within a narrow frequency band which coincides with the slow light regime of the waveguide mode. The three-dimensional numerical simulation reveals that the main loss channel for lasing modes located away from the waveguide end is out-of-plane scattering by structural disorder.

8 pages, 4 figures

References in corpus (3)

• Cavity Quantum Electrodynamics with Anderson-localized Modes
• Experimental realization of highly-efficient broadband coupling of single quantum dots to a photonic crystal waveguide
• Experimental observation of strong photon localization in disordered photonic crystal waveguides

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• The effect of defect layer on transmissivity and light field distribution in general function photonic crystals
• Measuring the spatial extent of individual localized photonic states
• Light field distribution of general function photonic crystals
• Transmission Character of General Function Photonic Crystals
• Linear and Non-linear Rabi Oscillations of a Two-Level System Resonantly Coupled to an Anderson-Localized Mode
• Extraction of optical Bloch modes in a photonic-crystal waveguide