Transitions between epitaxial growth regimes: A (1+1)-dimensional kinetic Monte Carlo study

Abstract

To study epitaxial thin-film growth, a new model is introduced and extensive kinetic Monte Carlo simulations performed for a wide range of fluxes and temperatures. Varying the deposition conditions, a rich growth diagram is found. The model also reproduces several known regimes and in the limit of low particle mobility a new regime is defined. Finally, a relation is postulated between the temperatures of the kinetic and thermal roughening transitions.

References in corpus (7)

• Mechanisms of Stranski-Krastanov Growth
• Four Lectures on the Physics of Crystal Growth
• Re-entrant Layer-by-Layer Etching of GaAs(001)
• Morphology of Fine-Particle Monolayers Deposited on Nanopatterned Substrates
• Kinetic Monte Carlo simulation of faceted islands in heteroepitaxy using multi-state lattice model
• Thin film growth by random deposition of linear polymers on a square lattice
• Growth instability due to lattice-induced topological currents in limited mobility epitaxial growth models