Set, Reset, and Retention Times for Ionic and Filamentary Mem-Resistors
arXiv:1105.0134
Abstract
A dynamic systems model has previously been proposed for mem-resistors based on a driven damped harmonic oscillator differential equation describing electron and ionic depletion widths in a thin semiconductor film. This paper derives equations for set, reset, and retention times based on the previously proposed model. Keywords- mem-resistor, RRAM, ReRAM
5 pages