Charge control in laterally coupled double quantum dots
arXiv:1104.4939 · doi:10.1103/PhysRevB.84.041308
Abstract
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias leading to sharp energy shifts which we use to identify the emission from neutral and charged exciton complexes. Quantum tunnelling of these electrons is proposed to explain the reversed ordering of the trion emission lines as compared to that of excitons in our system.
4 pages, 4 figures submitted to PRB Rapid Comm
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Cited by in corpus (10)
- Tunneling transport through multi-electrons states in coupled quantum dots with Coulomb correlations
- Localized charge bifurcation in the coupled quantum dots
- Charge and spin configurations in the coupled quantum dots with Coulomb correlations induced by tunneling current
- Spectroscopic signatures of many-body interactions and delocalized states in self-assembled lateral quantum dot molecules
- Coulomb interaction signatures in self-assembled lateral quantum dot molecules
- Delocalization of electrons by cavity photons in transport through a quantum dot molecule
- Emission spectrum of quasi-resonant laterally coupled quantum dots
- Design of a 4-electrode optical device for application of vector electric fields to self-assembled quantum dot complexes
- External field induced switching of tunneling current in the coupled quantum dots
- Non-stationary effects in the system of coupled quantum dots influenced by the Coulomb correlations