Aharonov-Casher effect in Bi${}_2$Se${}_3$ square-ring interferometers

Abstract

Electrical control of spin dynamics in Bi${}_2$Se${}_3$ was investigated in ring-type interferometers. Aharonov-Bohm and Altshuler-Aronov-Spivak resistance oscillations against magnetic field, and Aharorov-Casher resistance oscillations against gate voltage were observed in the presence of a Berry phase of $\ddot{I}€$. A very large tunability of spin precession angle by gate voltage has been obtained, indicating that Bi${}_2$Se${}_3$-related materials with strong spin-orbit coupling are promising candidates for constructing novel spintronic devices.

4 pages, 4 figures