High-$\hat{I}º$ field-effect transistor with copper-phthalocyanine

Abstract

The use of SrTiO${}_3$ dielectrics as high-permittivity insulator in organic thin film field effect transistors (FET) is evaluated. Field-effect transistors with sputtered SrTiO${}_3$ and copper-phthalocyanine (CuPc) as semiconducting layer were fabricated. The device preparation was performed in-situ in an ultra high vacuum chamber system. The dielectric in the transistors had a permittivity of up to 200 which led to low driving voltages of 3 V. The field effect transistors were p-type and reached mobilities of about $\hat{I}¼=1.5\times 10^{-3}$ cm${}^2$/Vs and an on/off ratio of $10^3$. These properties are compared to devices based on other dielectric materials.

9 pages, 6 figures