Multi-domain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors

Abstract

We revise the possibility of having an amplified surface potential in ferroelectric field-effect transistors pointed out by [S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008)]. We show that the negative-capacitance regime that allows for such an amplification is actually bounded by the appearance of multi-domain ferroelectricity. This imposes a severe limit to the maximum step-up of the surface potential obtainable in the device. We indicate new device design rules taking into account this scenario.

4 pages, 3 figures

Cited by in corpus (11)

• Experimental Evidence of Ferroelectric Negative Capacitance in Nanoscale Heterostructures
• Phase Field Modeling of Domain Dynamics and Polarization Accumulation in Ferroelectric HZO
• Ferroelectric Negative Capacitance Domain Dynamics
• Electrodynamics of ferroelectric films with negative capacitance
• Harnessing ferroelectric domains for negative capacitance
• Physics and modeling of multi-domain FeFET with domain wall induced Negative Capacitance
• Variability Analysis in a 3-D Multi-Granular Hf${}_x$Zr${}_{1-x}$O${}_2$ Ferroelectric Capacitor
• Ferro-ionic States and Domains Morphology in Hf${}_x$Zr${}_{1-x}$O${}_2$ Nanoparticles
• Conditions for domain-free negative capacitance
• Novel mechanisms to enhance the capacitance beyond the classical limits in capacitors with free-electron-like electrodes
• Frequency dependent dielectric response of ferroelectric-dielectric junction with negative electric capacitance