Kondo temperature of a quantum dot

Abstract

We study the dependence of the Kondo temperature on the gate voltage in a strongly blockaded quantum dot with a small single-particle level spacing. We show that the dependence cannot be fitted to that of the Anderson impurity model with the gate voltage-independent level width. The effect originates in high-order tunneling processes, which make a dominant contribution to the exchange amplitude when the gate voltage is tuned away from the middle of the Coulomb blockade valley.

References in corpus (4)

• Kondo effect in quantum dots
• Spin-1/2 Kondo effect in an InAs nanowire quantum dot: the Unitary limit, conductance scaling and Zeeman splitting
• Universal transport signatures in two-electron molecular quantum dots: gate-tunable Hund's rule, underscreened Kondo effect and quantum phase transitions
• Kondo Temperature in Multilevel Quantum Dots

Cited by in corpus (2)

• Build-up of the Kondo effect from real-time 2PI effective action for the Anderson impurity model
• Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles