Twisted-light-induced optical transitions in semiconductors: Free-carrier quantum kinetics
arXiv:1102.4765 · doi:10.1103/PhysRevB.82.125207
Abstract
We theoretically investigate the interband transitions and quantum kinetics induced by light carrying orbital angular momentum, or twisted light, in bulk semiconductors. We pose the problem in terms of the Heisenberg equations of motion of the electron populations, and inter- and intra-band coherences. Our theory extends the free-carrier Semiconductor Bloch Equations to the case of photo-excitation by twisted light. The theory is formulated using cylindrical coordinates, which are better suited to describe the interaction with twisted light than the usual cartesian coordinates used to study regular optical excitation. We solve the equations of motion in the low excitation regime, and obtain analytical expressions for the coherences and populations; with these, we calculate the orbital angular momentum transferred from the light to the electrons and the paramagnetic and diamagnetic electric current densities.
11 pages, 3 figures
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Cited by in corpus (15)
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- Fermionic Chern insulator from twisted light with linear polarization
- Spin and charge transport induced by a twisted light beam on a surface of a topological insulator
- Twisted-light-induced intersubband transitions in quantum wells at normal incidence
- Two-dimensional excitons from twisted light and the fate of the photon's orbital angular momentum
- Tuning of non-paraxial effects of the Laguerre-Gaussian beam interacting with the two-component Bose-Einstein condensates
- Insensitivity of spin dynamics to the orbital angular momentum transferred from twisted light to extended semiconductors
- Spin Polarization of Photoelectrons in GaAs Excited by Twisted Photons
- Optical conductivity and orbital magnetization of Floquet vortex states
- Optical vortex probe of loop-current chirality in moiré materials
- Electric and spin-valley currents induced by structured light in 2D Dirac materials