Ambipolar diffusion of photo-excited carriers in bulk GaAs

Abstract

The ambipolar carrier diffusion in bulk GaAs is studied by using an ultrafast pump-probe technique with a high spatial resolution. Carriers with a point-like spatial profile are excited by a tightly focused pump laser pulse. The spatiotemporal dynamics of the carriers are monitored by a time-delayed and spatially scanned probe pulse. Ambipolar diffusion coefficients are deduced from linear fits to the expansion of the area of the profiles, and are found to decrease from about 170~${\mathrm{cm}}^2{\mathrm{s}}^{-1}$ at 10 K to about 20~${\mathrm{cm}}^2{\mathrm{s}}^{-1}$ at room temperature. Our results are consistent with those deduced from the previously measured mobilities.

arXiv comment4 pages, 4 figures

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• Ambipolar spin diffusion and D'yakonov-Perel' spin relaxation in GaAs quantum wells
• Hot exciton transport in ZnSe quantum wells
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