On-chip parametric amplification with 26.5~dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides

Abstract

We present the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at telecom wavelength is reported. Measured nonlinear parameter is 770~${\text{W}}^{-1}{\text{m}}^{-1}$, nonlinear absorption 28~${\text{W}}^{-1}{\text{m}}^{-1}$, bandgap $1.61$~eV.

3 pages, 2 figures, accepted to Optics Letters

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